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| APTGL180A120T3AG Phase leg Trench + Field Stop IGBT4 Power Module 29 30 31 32 13 VCES = 1200V IC = 180A @ Tc = 100C Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control Features * Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated * Very low stray inductance * Kelvin emitter for easy drive * Internal thermistor for temperature monitoring * High level of integration * AlN substrate for improved thermal performance 4 3 26 22 27 23 28 25 R1 8 7 16 18 19 20 14 28 27 26 25 29 30 23 22 20 19 18 16 15 31 32 2 3 4 7 8 10 11 12 14 13 Benefits * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * RoHS Compliant Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together Absolute maximum ratings TC = 25C TC = 100C TC = 25C TC = 25C Tj = 125C July, 2009 1-5 APTGL180A120T3AG - Rev 1 Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Max ratings 1200 230 180 300 20 940 300A @ 1100V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGL180A120T3AG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE = 15V IC = 150A Tj = 125C VGE = VCE , IC = 5.5 mA VGE = 20V, VCE = 0V Min Typ 1.8 2.2 5.8 Max 300 2.2 6.5 200 Unit A V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= -8V / 15V ; VCE=600V IC=150A Inductive Switching (25C) VGE = 15V VCE = 600V IC = 150A RG = 3 Inductive Switching (150C) VGE = 15V VCE = 600V IC = 150A RG = 3 VGE = 15V TJ = 150C VCE = 600V IC = 300A TJ = 150C RG = 3 VGE 15V ; VBus = 900V tp 10s ; Tj = 150C Min Typ 9.3 0.58 0.5 0.85 130 20 300 45 150 35 350 80 13.5 14.5 600 ns Max Unit nF C ns mJ mJ A Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 125C Tc = 100C Min 1200 Typ Max 150 600 Unit V A A Maximum Reverse Leakage Current DC Forward Current VR=1200V 120 2.5 3 1.8 265 350 1120 5780 3 IF = 120A Diode Forward Voltage IF = 240A IF = 120A IF = 120A VR = 800V di/dt =400A/s Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C V Qrr Reverse Recovery Charge nC www.microsemi.com 2-5 APTGL180A120T3AG - Rev 1 trr Reverse Recovery Time ns July, 2009 APTGL180A120T3AG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.16 0.37 175 125 100 4.7 110 Unit C/W RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz V C N.m g To heatsink M4 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25 T: Thermistor temperature Min Typ 50 5 3952 4 Max Unit k % K % SP3 Package outline (dimensions in mm) 1 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGL180A120T3AG - Rev 1 July, 2009 17 28 APTGL180A120T3AG Typical Performance Curve 300 250 200 IC (A) 150 100 50 0 0 1 2 VCE (V) Transfert Characteristics TJ=25C TJ=25C Output Characteristics (VGE=15V) Output Characteristics 300 250 200 IC (A) TJ = 150C VGE=19V VGE=15V TJ=150C 150 100 50 0 VGE=9V 3 4 0 1 2 VCE (V) 3 4 300 250 200 IC (A) 40 Energy losses vs Collector Current VCE = 600V VGE = 15V RG = 3. TJ = 150C Eon 30 E (mJ) 150 100 50 0 5 6 7 8 9 VGE (V) Switching Energy Losses vs Gate Resistance 45 37.5 30 VCE = 600V VGE =15V IC = 150A TJ = 150C Eon 20 Eoff TJ=150C 10 0 10 11 12 13 0 50 100 150 IC (A) Reverse Bias Safe Operating Area 350 300 250 IC (A) 200 150 100 50 0 0 5 10 15 Gate Resistance (ohms) 20 0 300 600 VCE (V) 900 1200 VGE=15V TJ=150C RG=3 200 250 300 E (mJ) 22.5 Eoff 15 7.5 0 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.18 Thermal Impedance (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.9 IGBT 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGL180A120T3AG - Rev 1 July, 2009 APTGL180A120T3AG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 180 ZVS VCE=600V D=50% RG=3 TJ=150C Tc=75C Forward Characteristic of diode 300 250 TJ=125C 150 120 90 60 30 0 0 40 80 120 IC (A) Hard switching ZCS 200 IF (A) 150 100 50 0 TJ=25C 160 200 240 0 0.5 1 1.5 2 VF (V) 2.5 3 3.5 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7 Diode 0.05 0 0.00001 Rectangular Pulse Duration in Seconds Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGL180A120T3AG - Rev 1 July, 2009 |
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